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Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon

Type:
Journal
Info:
Semiconductors, April 2014, Volume 48, Issue 4, pp 497-500
Date:
2014-04-17
DOI:
http://dx.doi.org/10.1134/S1063782614040204

Author Information

Name Institution
A.M. MahajanNorth Maharashtra University

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

210