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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(6), Nov/Dec 2014
Date:
2014-10-01
Author Information
| Name | Institution |
|---|---|
| Daming Wei | Kansas State University |
Films
Plasma Al2O3
Hardware used: Oxford Instruments FlexAL
Plasma TiO2
Hardware used: Oxford Instruments FlexAL
Film/Plasma Properties
Substrates
Notes
| 203 |