Title: Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
Type: Journal
Info: J. Vac. Sci. Technol. B 32(6), Nov/Dec 2014
Date: 2014-10-01
DOI: http://dx.doi.org/10.1116/1.4897919
Name
Institution
Kansas State University
Characteristic
Analysis
Diagnostic
203
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