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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(6), Nov/Dec 2014
Date:
2014-10-01
Author Information
| Name | Institution |
|---|---|
| Daming Wei | Kansas State University |
Films
Plasma Al2O3
Hardware used: Oxford Instruments FlexAL
Plasma TiO2
Hardware used: Oxford Instruments FlexAL
Film/Plasma Properties
Substrates
Keywords
Notes
| 203 |