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Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
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Publication Information
Title:
Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(6), Nov/Dec 2014
Date:
2014-10-01
Author Information
| Name | Institution |
|---|---|
| Daming Wei | Kansas State University |
Films
Plasma Al2O3
Hardware used: Oxford Instruments FlexAL
Plasma TiO2
Hardware used: Oxford Instruments FlexAL
Film/Plasma Properties
Substrates
Keywords
Notes
| 203 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |