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Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(6), Nov/Dec 2014
Date:
2014-10-01
Author Information
| Name | Institution |
|---|---|
| Daming Wei | Kansas State University |
Films
Plasma Al2O3
Hardware used: Oxford Instruments FlexAL
Plasma TiO2
Hardware used: Oxford Instruments FlexAL
Film/Plasma Properties
Substrates
Keywords
Notes
| 203 |