Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

Type:
Journal
Info:
J. Vac. Sci. Technol. B 32(6), Nov/Dec 2014
Date:
2014-10-01
DOI:
http://dx.doi.org/10.1116/1.4897919

Author Information

Name Institution
Daming WeiKansas State University

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
Deposition Temperature Range N/A

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Keywords

Notes

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