Publication Information

Title: Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

Type: Journal

Info: J. Vac. Sci. Technol. B 32(6), Nov/Dec 2014

Date: 2014-10-01

DOI: http://dx.doi.org/10.1116/1.4897919

Author Information

Name

Institution

Kansas State University

Films

Deposition Temperature Range N/A

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

203



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