Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
Type:
Journal
Info:
Applied Physics Letters 111, 113105 (2017)
Date:
2017-09-01
Author Information
| Name | Institution |
|---|---|
| Martijn F. J. Vos | Eindhoven University of Technology |
| Harm C. M. Knoops | Eindhoven University of Technology |
| R. A. Synowicki | J.A. Woollam Co., Inc. |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| Adriaan J. M. Mackus | Eindhoven University of Technology |
Films
Plasma AlF
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Density
Analysis: Custom
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Optical Properties
Analysis: VUV Spectroscopic Elllipsometry
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Al2O3 |
| GaP |
Notes
| 1196 |