Publication Information

Title:
Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
Type:
Journal
Info:
Applied Physics Letters 111, 113105 (2017)
Date:
2017-09-01

Author Information

Name Institution
Martijn F. J. VosEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
R. A. SynowickiJ.A. Woollam Co., Inc.
Erwin (W.M.M.) KesselsEindhoven University of Technology
Adriaan J. M. MackusEindhoven University of Technology

Films

Plasma AlF


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Density
Analysis: Custom

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Optical Properties
Analysis: VUV Spectroscopic Elllipsometry

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Al2O3
GaP

Keywords

Notes

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