Publication Information

Title: Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma

Type: Journal

Info: Applied Physics Letters 111, 113105 (2017)

Date: 2017-09-01

DOI: http://dx.doi.org/10.1063/1.4998577

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

J.A. Woollam Co., Inc.

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range = 50-300C

75-24-1

2551-62-4

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000U

Refractive Index

Ellipsometry

J.A. Woollam M-2000U

Uniformity

Ellipsometry

J.A. Woollam M-2000U

Conformality, Step Coverage

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Density

Custom

Custom

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Optical Properties

VUV Spectroscopic Elllipsometry

J.A. Woollam VUV-SE

Plasma Species

OES, Optical Emission Spectroscopy

Ocean Optics UBS 4000-UV-VIS

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific KA1066 spectrometer

Substrates

Al2O3

GaP

Keywords

Notes

1196



Shortcuts



© 2014-2019 plasma-ald.com