Publication Information

Title: Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

Type: Journal

Info: AIP ADVANCES 6, 065012 (2016)

Date: 2016-06-02

DOI: http://dx.doi.org/10.1063/1.4954238

Author Information

Name

Institution

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Samsung Electronics Co.

Stanford University

Films

Deposition Temperature = 350C

15112-89-7

7727-37-9

Deposition Temperature = 350C

15112-89-7

7664-41-7

Deposition Temperature = 350C

15112-89-7

7727-37-9

1333-74-0

Deposition Temperature = 350C

15112-89-7

7727-37-9

Deposition Temperature = 250C

13862-16-3

7727-37-9

Deposition Temperature = 350C

4109-96-0

7664-41-7

Deposition Temperature = 350C

4109-96-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Refractive Index

Ellipsometry

J.A. Woollam M-2000

Etch Rate

Wet Etch

J.A. Woollam M-2000

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Microstructure

TEM, Transmission Electron Microscope

FEI Titan ETEM

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

FEI Titan ETEM

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Substrates

Si(100)

Keywords

Notes

797



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