Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

Type:
Journal
Info:
AIP ADVANCES 6, 065012 (2016)
Date:
2016-06-02
DOI:
http://dx.doi.org/10.1063/1.4954238

Author Information

Name Institution
J ProvineStanford University
Peter SchindlerStanford University
Yongmin KimStanford University
Steve P. WalchStanford University
Hyo Jin KimStanford University
Ki-Hyun KimSamsung Electronics Co.
Fritz B. PrinzStanford University

Films

Plasma SiNx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Plasma SiNx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 350C

Plasma SiNx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 350C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
Trisilylamine [N(SiH3)3]
CAS#: 13862-16-3
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Plasma SiNx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 350C

Plasma SiNx

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Etch Rate
Analysis: Wet Etch
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan ETEM

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan ETEM

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Substrates

Si(100)

Notes

797