Trisilylamine [N(SiH3)3], CAS# 13862-16-3

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 5 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

1Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
2The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
3Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
4Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
5Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane