Publication Information

Title:
Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2013 volume 2, issue 11, N222-N227
Date:
2013-08-26

Author Information

Name Institution
Dina H. TriyosoGlobal Foundries
Klaus HempelGlobal Foundries
S. OhsiekGlobal Foundries
V. JaschkeGlobal Foundries
J. ShuGlobal Foundries
S. MutasGlobal Foundries
K. DittmarGlobal Foundries
J. SchaefferGlobal Foundries
D. UtessGlobal Foundries
M. LenskiGlobal Foundries

Films

Plasma SiNx

Hardware used: Unknown

CAS#: 13862-16-3


CAS#: 7727-37-9

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Stress
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Wet Etch Resistance
Analysis: Custom

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Keywords

Notes

1380