Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration

Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2013 volume 2, issue 11, N222-N227
Date:
2013-08-26
DOI:
http://dx.doi.org/10.1149/2.022311jss

Author Information

Name Institution
Dina H. TriyosoGlobal Foundries
Klaus HempelGlobal Foundries
S. OhsiekGlobal Foundries
V. JaschkeGlobal Foundries
J. ShuGlobal Foundries
S. MutasGlobal Foundries
K. DittmarGlobal Foundries
J. SchaefferGlobal Foundries
D. UtessGlobal Foundries
M. LenskiGlobal Foundries

Films

Plasma SiNx

Hardware used: Unknown
Trisilylamine [N(SiH3)3]
CAS#: 13862-16-3
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

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N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 300-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Stress
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vertex 70

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Notes

1380