Publication Information

Title: Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 01A140 (2016)

Date: 2015-12-03

DOI: http://dx.doi.org/10.1116/1.4937993

Author Information

Name

Institution

Intermolecular

Intermolecular

Intermolecular

Intermolecular

Intermolecular

Films

Plasma SiNx using Unknown

Deposition Temperature Range = 250-300C

13862-16-3

7727-37-9

Plasma SiNx using Unknown

Deposition Temperature Range = 250-300C

15947-57-6

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Refractive Index

Ellipsometry

J.A. Woollam M-2000

Thickness

XRR, X-Ray Reflectivity

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Wet Etch Resistance

Wet Etch

Custom

Images

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

HFS, Hydrogen Forward Scattering

-

Density

RBS, Rutherford Backscattering Spectrometry

-

Substrates

Si(100)

Keywords

Notes

446



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