Publication Information

Title: Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 01A140 (2016)

Date: 2015-12-03

DOI: http://dx.doi.org/10.1116/1.4937993

Author Information

Name

Institution

Intermolecular

Intermolecular

Intermolecular

Intermolecular

Intermolecular

Films

Plasma SiNx using Unknown

Deposition Temperature Range = 250-300C

13862-16-3

7727-37-9

Plasma SiNx using Unknown

Deposition Temperature Range = 250-300C

15947-57-6

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Refractive Index

Ellipsometry

J.A. Woollam M-2000

Thickness

XRR, X-Ray Reflectivity

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Wet Etch Resistance

Wet Etch

Custom

Images

SEM, Scanning Electron Microscopy

Unknown

Chemical Composition, Impurities

HFS, Hydrogen Forward Scattering

Unknown

Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Substrates

Si(100)

Keywords

Notes

446



Shortcuts



© 2014-2018 plasma-ald.com