Publication Information

Title:
Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A140 (2016)
Date:
2015-12-03

Author Information

Name Institution
Stephen WeeksIntermolecular
Greg NowlingIntermolecular
Nobi FuchigamiIntermolecular
Michael BowesIntermolecular
Karl LittauIntermolecular

Films

Plasma SiNx

Hardware used: Unknown

CAS#: 13862-16-3

CAS#: 7727-37-9

Plasma SiNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Wet Etch Resistance
Analysis: Wet Etch

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: HFS, Hydrogen Forward Scattering

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Substrates

Si(100)

Keywords

Notes

446