Publication Information

Title: The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

Type: Journal

Info: physica status solidi (a) Volume 212, Issue 12, pages 2785-2790, 2015

Date: 2015-07-14

DOI: http://dx.doi.org/10.1002/pssa.201532274

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma SiNx using Custom ICP

Deposition Temperature = 350C

13862-16-3

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Plasma Species

OES, Optical Emission Spectroscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Wet Etch Resistance

Wet Etch

Unknown

Density

XRR, X-Ray Reflectivity

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Breakdown Voltage

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

Keywords

Notes

542



Shortcuts



© 2014-2018 plasma-ald.com