The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

Type:
Journal
Info:
physica status solidi (a) Volume 212, Issue 12, pages 2785-2790, 2015
Date:
2015-07-14

Author Information

Name Institution
Woochool JangHanyang University
Heeyoung JeonHanyang University
Hyoseok SongHanyang University
Honggi KimHanyang University
Jingyu ParkHanyang University
Hyunjung KimHanyang University
Hyeongtag JeonHanyang University

Films

Plasma SiNx


Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Wet Etch Resistance
Analysis: Wet Etch

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

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