DCS, H2SiCl2, DiChloroSilane, CAS# 4109-96-0

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NumberVendorLink
1GelestDichlorosilane

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 9 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer epitaxy of Si using atomic H
2Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
3A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
4Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
5Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
6Challenges in spacer process development for leading-edge high-k metal gate technology
7Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
8Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
9Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition