Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:

  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.



DCS, H2SiCl2, DiChloroSilane, CAS# 4109-96-0

Where to buy

NumberVendorRegionLink
1Pegasus ChemicalsπŸ‡¬πŸ‡§Dichlorosilane
2GelestπŸ‡ΊπŸ‡ΈDichlorosilane
3Yoodatech (Shanghai) Co., LtdDCS, H2SiCl2, DiChloroSilane - contact maggie@yoodatech.com

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
2Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
3Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
4Atomic layer epitaxy of Si using atomic H
5Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
6Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
7Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
8A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
9Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
10Challenges in spacer process development for leading-edge high-k metal gate technology