Evaluation of Stress Induced by Plasma Assisted ALD SiN Film

Type:
Journal
Info:
ECS Transactions, 53 (3) 51-56 (2013)
Date:
2013-06-01

Author Information

Name Institution
K. NagataMeiji University
M. NagasakaMeiji University
T. YamaguchiMeiji University
Atsushi OguraMeiji University
H. OjiJapan Synchrotron Radiation Research Institute
J. SonJapan Synchrotron Radiation Research Institute
I. HirosawaJapan Synchrotron Radiation Research Institute
Y. WatanabeTokyo Electron Technology Solutions, Ltd.
Y. HirotaTokyo Electron Technology Solutions, Ltd.

Films

Plasma SiNx


Film/Plasma Properties

Characteristic: Stress
Analysis: Raman Spectroscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Binding
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy

Substrates

Si(001)

Notes

1375