Evaluation of Stress Induced by Plasma Assisted ALD SiN Film

Type:
Journal
Info:
ECS Transactions, 53 (3) 51-56 (2013)
Date:
2013-06-01
DOI:
http://dx.doi.org/10.1149/05303.0051ecst

Author Information

Name Institution
K. NagataMeiji University
M. NagasakaMeiji University
T. YamaguchiMeiji University
Atsushi OguraMeiji University
H. OjiJapan Synchrotron Radiation Research Institute
J. SonJapan Synchrotron Radiation Research Institute
I. HirosawaJapan Synchrotron Radiation Research Institute
Y. WatanabeTokyo Electron Technology Solutions, Ltd.
Y. HirotaTokyo Electron Technology Solutions, Ltd.

Films

Plasma SiNx

Hardware used: Unknown
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 350-500C

Film/Plasma Properties

Characteristic: Stress
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Chemical Binding
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Diagnostic: Synchrotron

Substrates

Si(001)

Notes

1375