Publication Information

Title: Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition

Type: Journal

Info: Journal of Vacuum Science & Technology A 36, 01A111 (2018)

Date: 2017-11-07

DOI: http://dx.doi.org/10.1116/1.5003403

Author Information

Name

Institution

Tokyo Electron Technology Solutions, Ltd.

Tokyo Electron America, Inc.

Esgee Technologies, Inc.

University of Texas at Austin

Tokyo Electron Technology Solutions, Ltd.

Tokyo Electron Technology Solutions, Ltd.

Films

Deposition Temperature Range = 400-500C

4109-96-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

KLA-Tencor SpectraFx

Substrates

Silicon

Keywords

Modeling

Notes

1099



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