Publication Information

Title:
Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01A111 (2018)
Date:
2017-11-07

Author Information

Name Institution
Toshihiko IwaoTokyo Electron Technology Solutions, Ltd.
Peter L. G. VentzekTokyo Electron America, Inc.
Rochan UpadhyayEsgee Technologies, Inc.
Laxminarayan L. RajaUniversity of Texas at Austin
Hirokazu UedaTokyo Electron Technology Solutions, Ltd.
Kiyotaka IshibashiTokyo Electron Technology Solutions, Ltd.

Films

Plasma SiNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Silicon

Keywords

Modeling

Notes

1099