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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Challenges in spacer process development for leading-edge high-k metal gate technology
Type:
Journal
Info:
Phys. Status Solidi C 11, No. 1, 73-76 (2014)
Date:
2013-11-01
Author Information
| Name | Institution |
|---|---|
| Fabian Koehler | Global Foundries |
| Dina H. Triyoso | Global Foundries |
| Itasham Hussain | Global Foundries |
| Bianca Antonioli | Global Foundries |
| Klaus Hempel | Global Foundries |
Films
Plasma SiNx
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Substrates
Keywords
Notes
| 100 wafer batches with ~1 hour process time for 5nm. |
| 1371 |