Challenges in spacer process development for leading-edge high-k metal gate technology

Type:
Journal
Info:
Phys. Status Solidi C 11, No. 1, 73-76 (2014)
Date:
2013-11-01
DOI:
http://dx.doi.org/10.1002/pssc.201300157

Author Information

Name Institution
Fabian KoehlerGlobal Foundries
Dina H. TriyosoGlobal Foundries
Itasham HussainGlobal Foundries
Bianca AntonioliGlobal Foundries
Klaus HempelGlobal Foundries

Films

Plasma SiNx

Hardware used: Custom Batch
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 400-500C

Plasma SiNx

Hardware used: Custom Batch
MCS, MonoChloroSilane, H3ClSi
CAS#: 13465-78-6
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: Custom

Substrates

Keywords

Notes

100 wafer batches with ~1 hour process time for 5nm.
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