Publication Information

Title:
Challenges in spacer process development for leading-edge high-k metal gate technology
Type:
Journal
Info:
Phys. Status Solidi C 11, No. 1, 73-76 (2014)
Date:
2013-11-01

Author Information

Name Institution
Fabian KoehlerGlobal Foundries
Dina H. TriyosoGlobal Foundries
Itasham HussainGlobal Foundries
Bianca AntonioliGlobal Foundries
Klaus HempelGlobal Foundries

Films

Plasma SiNx


Plasma SiNx

Hardware used: Custom Batch


CAS#: 7664-41-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Wet Etch Resistance
Analysis: Wet Etch

Substrates

Keywords

Notes

100 wafer batches with ~1 hour process time for 5nm.
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