Challenges in spacer process development for leading-edge high-k metal gate technology
Type:
Journal
Info:
Phys. Status Solidi C 11, No. 1, 73-76 (2014)
Date:
2013-11-01
Author Information
Name | Institution |
---|---|
Fabian Koehler | Global Foundries |
Dina H. Triyoso | Global Foundries |
Itasham Hussain | Global Foundries |
Bianca Antonioli | Global Foundries |
Klaus Hempel | Global Foundries |
Films
Plasma SiNx
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Substrates
Notes
100 wafer batches with ~1 hour process time for 5nm. |
1371 |