Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy

Type:
Journal
Info:
Applied Surface Science 112 (1997) 75-81
Date:
1997-03-01
DOI:
https://doi.org/10.1016/S0169-4332(96)01020-3

Author Information

Name Institution
Shin YokoyamaHiroshima University
Hiroshi GotoHiroshima University
Takahiro MiyamotoHiroshima University
Norihiko IkedaHiroshima University
Kentaro ShibaharaHiroshima University

Films

Other SiNx

Hardware used: Custom Microwave Plasma
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
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NH3, Ammonia
CAS#: 7664-41-7
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 250-500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR reflectance
Diagnostic: -

Characteristic: Bonding States
Analysis: FTIR reflectance
Diagnostic: -

Substrates

Si(100)
SiO2
Si3N4

Notes

1588