Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy

Type:
Journal
Info:
Applied Surface Science 112 (1997) 75-81
Date:
1997-03-01

Author Information

Name Institution
Shin YokoyamaHiroshima University
Hiroshi GotoHiroshima University
Takahiro MiyamotoHiroshima University
Norihiko IkedaHiroshima University
Kentaro ShibaharaHiroshima University

Films

Other SiNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: FTIR reflectance

Characteristic: Bonding States
Analysis: FTIR reflectance

Substrates

Si(100)
SiO2
Si3N4

Keywords

Notes

1588