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A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
Type:
Conference Proceedings
Info:
ECS Transactions, 11 (7) 55-60 (2007)
Date:
2007-07-01
Author Information
| Name | Institution |
|---|---|
| Toshio Ando | Hitachi, Ltd. |
| Yosuke Ohta | Hitachi, Ltd. |
| Hiroshi Ashihara | Hitachi, Ltd. |
| Toshinori Imai | Hitachi, Ltd. |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Capacitance
Analysis: C-F, Capacitance-Frequency Meaurements
Characteristic: Loss Tangent
Analysis: C-F, Capacitance-Frequency Meaurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| TiN |
Notes
| 1172 |