A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment

Type:
Conference Proceedings
Info:
ECS Transactions, 11 (7) 55-60 (2007)
Date:
2007-07-01
DOI:
http://dx.doi.org/10.1149/1.2779069

Author Information

Name Institution
Toshio AndoHitachi, Ltd.
Yosuke OhtaHitachi, Ltd.
Hiroshi AshiharaHitachi, Ltd.
Toshinori ImaiHitachi, Ltd.

Films

Plasma SiNx

Hardware used: Custom
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 350-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-F, Capacitance-Frequency Meaurements
Diagnostic: -

Characteristic: Loss Tangent
Analysis: C-F, Capacitance-Frequency Meaurements
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

TiN

Notes

1172