Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
Type:
Journal
Info:
Appl. Phys. Lett. 68, 3257 (1996)
Date:
1996-03-28
Author Information
| Name | Institution |
|---|---|
| Hiroshi Goto | Hiroshima University |
| Kentaro Shibahara | Hiroshima University |
| Shin Yokoyama | Hiroshima University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Unknown |
Notes
| 73 |