Publication Information

Title:
Atomic layer epitaxy of Si using atomic H
Type:
Conference Proceedings
Info:
Thin Solid Films 225 (1993) 168 - 172
Date:
1992-06-02

Author Information

Name Institution
Shigeru ImaiTokyo Institute of Technology
Toshio IizukaTokyo Institute of Technology
Osamu SugiuraTokyo Institute of Technology
Masaaki MatsukumaTokyo Institute of Technology

Films

Plasma Si


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Substrates

Si(111)

Keywords

Notes

1406