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Atomic layer epitaxy of Si using atomic H
Type:
Conference Proceedings
Info:
Thin Solid Films 225 (1993) 168 - 172
Date:
1992-06-02
Author Information
| Name | Institution |
|---|---|
| Shigeru Imai | Tokyo Institute of Technology |
| Toshio Iizuka | Tokyo Institute of Technology |
| Osamu Sugiura | Tokyo Institute of Technology |
| Masaaki Matsukuma | Tokyo Institute of Technology |
Films
Plasma Si
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Substrates
| Si(111) |
Notes
| 1406 |