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Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
Type:
Journal
Info:
J. Vac. Sci. Technol. A 16(2), Mar/Apr 1998
Date:
1997-11-28
Author Information
| Name | Institution |
|---|---|
| Eiji Hasunuma | Tokyo Institute of Technology |
| Satoshi Sugahara | Tokyo Institute of Technology |
| Shinji Hoshino | Tokyo Institute of Technology |
| Shigeru Imai | Tokyo Institute of Technology |
| Keiji Ikeda | Tokyo Institute of Technology |
| Masakiyo Matsumura | Tokyo Institute of Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Substrates
Notes
| 1223 |