Publication Information

Title:
Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
Type:
Journal
Info:
J. Vac. Sci. Technol. A 16(2), Mar/Apr 1998
Date:
1997-11-28

Author Information

Name Institution
Eiji HasunumaTokyo Institute of Technology
Satoshi SugaharaTokyo Institute of Technology
Shinji HoshinoTokyo Institute of Technology
Shigeru ImaiTokyo Institute of Technology
Keiji IkedaTokyo Institute of Technology
Masakiyo MatsumuraTokyo Institute of Technology

Films

Plasma Si


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Substrates

Keywords

Notes

1223