Name

Institution

Chaitanya Krishna Ande

Eindhoven University of Technology

Harm C. M. Knoops

Eindhoven University of Technology

Koen de Peuter

Eindhoven University of Technology

Maarten van Drunen

Eindhoven University of Technology

Simon D. Elliott

Tyndall National Institute, University College Cork

Erwin (W.M.M.) Kessels

Eindhoven University of Technology

Plasma SiN_x using Oxford Instruments FlexAL

Deposition Temperature = 350C

BTBAS, ((CH₃)₃CNH)₂SiH₂, Bis(Tert-ButylAmido) Silane

186598-40-3

Where to buy precursor

N₂, Nitrogen

7727-37-9

Plasma SiN_x using Oxford Instruments FlexAL

Deposition Temperature = 350C

BTBAS, ((CH₃)₃CNH)₂SiH₂, Bis(Tert-ButylAmido) Silane

186598-40-3

Where to buy precursor

N₂, Nitrogen

7727-37-9

H₂, Hydrogen

1333-74-0

Plasma SiN_x using Oxford Instruments FlexAL

Deposition Temperature = 350C

BTBAS, ((CH₃)₃CNH)₂SiH₂, Bis(Tert-ButylAmido) Silane

186598-40-3

Where to buy precursor

NH₃, Ammonia

7664-41-7

Plasma SiN_x using Oxford Instruments FlexAL

Deposition Temperature = 350C

BTBAS, ((CH₃)₃CNH)₂SiH₂, Bis(Tert-ButylAmido) Silane

186598-40-3

Where to buy precursor

H₂, Hydrogen

1333-74-0

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Silicon

523