Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride

Type:
Journal
Info:
J. Phys. Chem. Lett. 2015, 6, 3610-3614
Date:
2015-08-30
DOI:
http://dx.doi.org/10.1021/acs.jpclett.5b01596

Author Information

Name Institution
Chaitanya Krishna AndeEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Koen de PeuterEindhoven University of Technology
Maarten van DrunenEindhoven University of Technology
Simon D. ElliottTyndall National Institute, University College Cork
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 350C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 350C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 350C

Plasma SiNx

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Silicon

Keywords

Notes

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