Publication Information

Title: Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride

Type: Journal

Info: J. Phys. Chem. Lett. 2015, 6, 3610-3614

Date: 2015-08-30

DOI: http://dx.doi.org/10.1021/acs.jpclett.5b01596

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Tyndall National Institute, University College Cork

Eindhoven University of Technology

Films

Deposition Temperature = 350C

186598-40-3

7727-37-9

Deposition Temperature = 350C

186598-40-3

7727-37-9

1333-74-0

Deposition Temperature = 350C

186598-40-3

7664-41-7

Deposition Temperature = 350C

186598-40-3

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Substrates

Silicon

Keywords

Notes

523



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