Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs

Type:
Journal
Info:
Adv. Electron. Mater. 2022, 8, 2100781
Date:
2021-11-20
DOI:
https://doi.org/10.1002/aelm.202100781

Author Information

Name Institution
Reyhaneh MahloujiEindhoven University of Technology
Marcel A. VerheijenEurofins Materials Science
Yue ZhangEindhoven University of Technology
Jan P. HofmannEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology

Films

Plasma MoOx

Hardware used: Oxford Instruments FlexAL
Bis(t-butylimido)bis(dimethylamino)molybdenum
CAS#: 923956-62-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 50C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000FI

Substrates

SiO2

Notes

1638