Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs

Type:
Journal
Info:
Adv. Electron. Mater. 2022, 8, 2100781
Date:
2021-11-20

Author Information

Name Institution
Reyhaneh MahloujiEindhoven University of Technology
Marcel A. VerheijenEurofins Materials Science
Yue ZhangEindhoven University of Technology
Jan P. HofmannEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology

Films

Plasma MoOx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

SiO2

Notes

1638