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Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2014, 6 (13), pp 10656-10660
Date:
2014-06-19
DOI:
http://dx.doi.org/10.1021/am502298z

Author Information

Name Institution
Jihwan AnStanford University

Films

Thermal BaTiO3

Hardware used: Custom Remote Inductively Coupled Plasma
Bis(n-propyl tetramethyl cyclopentadienyl) barium, Ba[(n-Pr)(Me)4Cp]2
CAS#: 210758-43-3
Where to buy precursor
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Substrates

Notes

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