Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 12 (4) H92-H94 (2009)
Date:
2008-12-08
DOI:
http://dx.doi.org/10.1149/1.3067834

Author Information

Name Institution
Honggyu KimHanyang University
Sanghyun WooHanyang University
Hyungchul KimHanyang University
Seokhwan BangHanyang University
Yongchan KimHanyang University
Daesik ChoiHanyang University
Hyeongtag JeonHanyang University

Films

Plasma HfO2

Hardware used: Custom
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6701F

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Charge Retention Time
Analysis: C-t, Capacitance-time Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)
Pt

Notes

755