Publication Information

Title:
Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 66, No. 12, pp. 1885-1888
Date:
2015-05-27

Author Information

Name Institution
Jae-Sung ChoiHanyang University
Jea-Gun ParkHanyang University

Films


Other Al2O3


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: Conductance-Voltage Measurements

Substrates

InGaAs

Keywords

Notes

InGaAs substrate exposed to NH3 plasma before thermal ALD HfO2/Al2O3 nanolaminate deposition.
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