Publication Information

Title: Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 66, No. 12, pp. 1885-1888

Date: 2015-05-27

DOI: http://dx.doi.org/10.3938/jkps.66.1885

Author Information

Name

Institution

Hanyang University

Hanyang University

Films

Deposition Temperature = 250C

7664-41-7

352535-01-4

7732-18-5

Deposition Temperature = 250C

7664-41-7

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Frequency Dispersion

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Interface Trap Density

Conductance-Voltage Measurements

Keithley 4200-SCS

Substrates

InGaAs

Keywords

Notes

InGaAs substrate exposed to NH3 plasma before thermal ALD HfO2/Al2O3 nanolaminate deposition.

359



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