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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
  • Surface modification

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Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors

Type:
Conference Proceedings
Info:
2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM)
Date:
2016-08-21
DOI:
http://dx.doi.org/10.1109/ISAF.2016.7578103

Author Information

Name Institution
Xin LiuXi'an Jiaotong University
Yuqiu LeiXi'an Jiaotong University
Yonghong ChengXi'an Jiaotong University

Films

Plasma HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 280C

Film/Plasma Properties

Characteristic: Midgap Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

973