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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
Type:
Conference Proceedings
Info:
2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM)
Date:
2016-08-21
Author Information
| Name | Institution |
|---|---|
| Xin Liu | Xi'an Jiaotong University |
| Yuqiu Lei | Xi'an Jiaotong University |
| Yonghong Cheng | Xi'an Jiaotong University |
Films
Film/Plasma Properties
Characteristic: Midgap Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Silicon |
Notes
| 973 |