Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors

Type:
Conference Proceedings
Info:
2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM)
Date:
2016-08-21
DOI:
http://dx.doi.org/10.1109/ISAF.2016.7578103

Author Information

Name Institution
Xin LiuXi'an Jiaotong University
Yuqiu LeiXi'an Jiaotong University
Yonghong ChengXi'an Jiaotong University

Films

Plasma HfO2

Hardware used: Unknown
TEMAHf, (EtMeN)4Hf, [(C2H5)(CH3)N]4Hf, Tetrakis(EthylMethylAmido) Hafnium, Hafnium Ethylmethylamide
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 280C

Film/Plasma Properties

Characteristic: Midgap Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Keywords

Radiation Hardness

Notes

973