Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 33, 01A101 (2015)
Date:
2014-08-18
Author Information
Name | Institution |
---|---|
Duo Cao | Chinese Academy of Sciences |
Xinhong Cheng | Chinese Academy of Sciences |
Li Zheng | Chinese Academy of Sciences |
Dawei Xu | Chinese Academy of Sciences |
Zhongjian Wang | Chinese Academy of Sciences |
Chao Xia | Chinese Academy of Sciences |
Lingyan Shen | Chinese Academy of Sciences |
Yuehui Yu | Chinese Academy of Sciences |
DaShen Shen | University of Alabama in Huntsville |
Films
Film/Plasma Properties
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Conduction Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Si(100) |
Notes
353 |