Publication Information

Title: Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition

Type: Journal

Info: J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A127

Date: 2013-12-04

DOI: http://dx.doi.org/10.1116/1.4850175

Author Information

Name

Institution

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

University of Alabama in Huntsville

Films

Plasma HfLaOx using Unknown

Deposition Temperature = 200C

175923-07-6

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Philips CM200-FEG

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Philips CM200-FEG

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Substrates

p-type SOI(100)

Keywords

PEALD Film Development

High-k Dielectric Thin Films

Notes

Substrates pirahna and HF cleaned

Post metalization anneal

Rapid thermal anneal

6



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