Publication Information

Title:
Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A127
Date:
2013-12-04

Author Information

Name Institution
Wenyan WanChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Duo CaoChinese Academy of Sciences
Li ZhengChinese Academy of Sciences
Dawei XuChinese Academy of Sciences
Zhongjian WangChinese Academy of Sciences
Chao XiaChinese Academy of Sciences
Lingyan ShenChinese Academy of Sciences
Yuehui YuChinese Academy of Sciences
DaShen ShenUniversity of Alabama in Huntsville

Films


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

p-type SOI(100)

Keywords

PEALD Film Development
High-k Dielectric Thin Films

Notes

Substrates pirahna and HF cleaned
Post metalization anneal
Rapid thermal anneal
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