Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Volume 307, 15 July 2013, Pages 463-467
Date:
2012-12-24
DOI:
http://dx.doi.org/10.1016/j.nimb.2012.12.102

Author Information

Name Institution
Duo CaoChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Tingting JiaChinese Academy of Sciences
Li ZhengChinese Academy of Sciences
Dawei XuChinese Academy of Sciences
Zhongjian WangChinese Academy of Sciences
Chao XiaChinese Academy of Sciences
Yuehui YuChinese Academy of Sciences

Films

Plasma HfAlOx

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 160C

Plasma HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 160C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Notes

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