Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Volume 307, 15 July 2013, Pages 463-467
Date:
2012-12-24

Author Information

Name Institution
Duo CaoChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Tingting JiaChinese Academy of Sciences
Li ZhengChinese Academy of Sciences
Dawei XuChinese Academy of Sciences
Zhongjian WangChinese Academy of Sciences
Chao XiaChinese Academy of Sciences
Yuehui YuChinese Academy of Sciences

Films



Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Keywords

Notes

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