Publication Information

Title: Symmetrical Al2O3-based passivation layers for p- and n-type silicon

Type: Conference Proceedings

Info: Solar Energy Materials and Solar Cells, Volume 131, December 2014, Pages 72-76, SI: SiliconPV 2014

Date: 2014-06-02

DOI: http://dx.doi.org/10.1016/j.solmat.2014.06.005

Author Information

Name

Institution

Daniel Kai Simon

NaMLab gGmbH

Films

Thermal Al2O3 using Unknown

Deposition Temperature = 150C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Water, H2O

7732-18-5

Thermal HfO2 using Unknown

Deposition Temperature = 150C

TEMAH, Tetrakis[(EthylMethyl)Amido]Hafnium, [(EtMe)N]4Hf

352535-01-4

Where to buy precursor

Water, H2O

7732-18-5

Plasma SiO2 using Unknown

Deposition Temperature = 150C

Diaminosilane, SiH2(NH2)2

0-0-0

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Substrates

Keywords

Thin Film Solar Cell

Passivation

Notes

PEALD SiO2 and thermal ALD Al2O3 and HfO2 for PV passivation application.

290


Mark Sowa

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