Symmetrical Al2O3-based passivation layers for p- and n-type silicon

Type:
Conference Proceedings
Info:
Solar Energy Materials and Solar Cells, Volume 131, December 2014, Pages 72-76, SI: SiliconPV 2014
Date:
2014-06-02
DOI:
http://dx.doi.org/10.1016/j.solmat.2014.06.005

Author Information

Name Institution
Daniel Kai SimonNaMLab gGmbH

Films

Thermal Al2O3

Hardware used: Unknown
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 150C

Thermal HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 150C

Plasma SiO2

Hardware used: Unknown
Diaminosilane, SiH2(NH2)2
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Keywords

Thin Film Solar Cell
Passivation

Notes

PEALD SiO2 and thermal ALD Al2O3 and HfO2 for PV passivation application.
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