An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices

Type:
Journal
Info:
Mater. Res. Express 3 (2016) 035012
Date:
2016-02-23
DOI:
http://dx.doi.org/10.1088/2053-1591/3/3/035012

Author Information

Name Institution
Xiaowei ChiXiamen University
Xiaoling LanXiamen University
Chao LuXiamen University
Haiyang HongXiamen University
Cheng LiXiamen University
Songyan ChenXiamen University
Hongkai LaiXiamen University
Wei HuangXiamen University
Jianfang XuXiamen University

Films

Plasma HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Plasma HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Ge

Notes

817