Publication Information

Title:
An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
Type:
Journal
Info:
Mater. Res. Express 3 (2016) 035012
Date:
2016-02-23

Author Information

Name Institution
Xiaowei ChiXiamen University
Xiaoling LanXiamen University
Chao LuXiamen University
Haiyang HongXiamen University
Cheng LiXiamen University
Songyan ChenXiamen University
Hongkai LaiXiamen University
Wei HuangXiamen University
Jianfang XuXiamen University

Films




Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Ge

Keywords

Notes

817