Publication Information

Title: Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: Nanoscale Research Letters (2017) 12:370

Date: 2017-04-13

DOI: http://dx.doi.org/10.1186/s11671-017-2083-z

Author Information

Name

Institution

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Films

Plasma SiO2 using Picosun R200

Deposition Temperature = 250C

15112-89-7

7782-44-7

Thermal HfO2 using Picosun R200

Deposition Temperature = 250C

352535-01-4

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Interfacial Layer

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Valence Band

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Valence Band Offset

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Leakage Current

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Substrates

Ge

SiO2

Keywords

Notes

1053



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