Publication Information

Title:
Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:370
Date:
2017-04-13

Author Information

Name Institution
Yanqiang CaoNanjing University
Bing WuNanjing University
Di WuNanjing University
Aidong LiNanjing University

Films

Plasma SiO2



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Ge
SiO2

Keywords

Notes

1053