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Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 231 - 234
Date:
2015-04-18
Author Information
| Name | Institution |
|---|---|
| Vladamir Djara | IBM Research, Zurich Research Lab |
| Marilyne Sousa | IBM Research, Zurich Research Lab |
| Nikola Dordevic | IBM Research, Zurich Research Lab |
| Lukas Czornomaz | IBM Research, Zurich Research Lab |
| Veeresh Deshpande | IBM Research, Zurich Research Lab |
| Chiara Marchiori | IBM Research, Zurich Research Lab |
| Emanuele Uccelli | IBM Research, Zurich Research Lab |
| Daniele Caimi | IBM Research, Zurich Research Lab |
| Christophe Rossel | IBM Research, Zurich Research Lab |
| Jean Fompeyrine | IBM Research, Zurich Research Lab |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Band Gap
Analysis: Ellipsometry
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| InGaAs |
Notes
| 351 |