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Publication Information

Title: Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Type: Journal

Info: Microelectronic Engineering 147 (2015) 231 - 234

Date: 2015-04-18

DOI: http://dx.doi.org/10.1016/j.mee.2015.04.102

Author Information

Name

Institution

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

Plasma HfO2 using Unknown

Deposition Temperature Range N/A

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam VASE

Band Gap

Ellipsometry

J.A. Woollam VASE

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

InGaAs

Keywords

Notes

351


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