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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2020, 12 (15), pp 17725-17732
Date:
2020-03-20
Author Information
| Name | Institution |
|---|---|
| Mattia Halter | IBM Research, Zurich Research Lab |
| Laura Bégon-Lours | IBM Research, Zurich Research Lab |
| Valeria Bragaglia | IBM Research, Zurich Research Lab |
| Marilyne Sousa | IBM Research, Zurich Research Lab |
| Bert Jan Offrein | IBM Research, Zurich Research Lab |
| Stefan Abel | IBM Research, Zurich Research Lab |
| Mathieu Luisier | ETH Zürich |
| Jean Fompeyrine | IBM Research, Zurich Research Lab |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Substrates
| Silicon |
| TiN |
Notes
| 1484 |