Publication Information

Title:
Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2020, 12 (15), pp 17725-17732
Date:
2020-03-20
DOI:
http://dx.doi.org/10.1021/acsami.0c00877

Author Information

Name Institution
Mattia HalterIBM Research, Zurich Research Lab
Laura Bégon-LoursIBM Research, Zurich Research Lab
Valeria BragagliaIBM Research, Zurich Research Lab
Marilyne SousaIBM Research, Zurich Research Lab
Bert Jan OffreinIBM Research, Zurich Research Lab
Stefan AbelIBM Research, Zurich Research Lab
Mathieu LuisierETH Zürich
Jean FompeyrineIBM Research, Zurich Research Lab

Films

Plasma TiN

Hardware used: Unknown
TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide
CAS#: 3275-24-9
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma HfZrO2

Hardware used: Unknown
TEMAHf, (EtMeN)4Hf, [(C2H5)(CH3)N]4Hf, Tetrakis(EthylMethylAmido) Hafnium, Hafnium Ethylmethylamide
CAS#: 352535-01-4
Where to buy precursor
ZrCMMM, (MeCp)2Zr(OMe)(Me), Bis(methyl-η5-cyclopentadienyl)methoxymethyl zirconium
CAS#: 0-0-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma HfO2

Hardware used: Unknown
TEMAHf, (EtMeN)4Hf, [(C2H5)(CH3)N]4Hf, Tetrakis(EthylMethylAmido) Hafnium, Hafnium Ethylmethylamide
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL JEM ARM 200

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: aixACCT TF 2000

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Substrates

Silicon
TiN

Keywords

Notes

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