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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2020, 12 (15), pp 17725-17732
Date:
2020-03-20
Author Information
| Name | Institution |
|---|---|
| Mattia Halter | IBM Research, Zurich Research Lab |
| Laura Bégon-Lours | IBM Research, Zurich Research Lab |
| Valeria Bragaglia | IBM Research, Zurich Research Lab |
| Marilyne Sousa | IBM Research, Zurich Research Lab |
| Bert Jan Offrein | IBM Research, Zurich Research Lab |
| Stefan Abel | IBM Research, Zurich Research Lab |
| Mathieu Luisier | ETH Zürich |
| Jean Fompeyrine | IBM Research, Zurich Research Lab |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Substrates
| Silicon |
| TiN |
Keywords
Notes
| 1484 |