Publication Information

Title:
Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2020, 12 (15), pp 17725-17732
Date:
2020-03-20

Author Information

Name Institution
Mattia HalterIBM Research, Zurich Research Lab
Laura Bégon-LoursIBM Research, Zurich Research Lab
Valeria BragagliaIBM Research, Zurich Research Lab
Marilyne SousaIBM Research, Zurich Research Lab
Bert Jan OffreinIBM Research, Zurich Research Lab
Stefan AbelIBM Research, Zurich Research Lab
Mathieu LuisierETH Zürich
Jean FompeyrineIBM Research, Zurich Research Lab

Films




Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Polarization
Analysis: P-V, Polarization-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Substrates

Silicon
TiN

Keywords

Notes

1484