Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation

Type:
Journal
Info:
RSC Adv., 2016, 6, 97720-97727
Date:
2016-09-26

Author Information

Name Institution
Rajbir SinghCSIR-National Physical Laboratory (CSIR-NPL)
Vandana PanwarCSIR-National Physical Laboratory (CSIR-NPL)
Jagannath PanigrahiCSIR-National Physical Laboratory (CSIR-NPL)
P. K. SinghCSIR-National Physical Laboratory (CSIR-NPL)

Films

Plasma HfO2


Film/Plasma Properties

Characteristic: Surface Recombination Velocity
Analysis: -

Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Silicon

Notes

958