Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
Type:
Journal
Info:
RSC Adv., 2016, 6, 97720-97727
Date:
2016-09-26
Author Information
Name | Institution |
---|---|
Rajbir Singh | CSIR-National Physical Laboratory (CSIR-NPL) |
Vandana Panwar | CSIR-National Physical Laboratory (CSIR-NPL) |
Jagannath Panigrahi | CSIR-National Physical Laboratory (CSIR-NPL) |
P. K. Singh | CSIR-National Physical Laboratory (CSIR-NPL) |
Films
Plasma HfO2
Film/Plasma Properties
Characteristic: Surface Recombination Velocity
Analysis: -
Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Silicon |
Notes
958 |