Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (3) H196-H201 (2008)
Date:
2007-11-09
Author Information
| Name | Institution |
|---|---|
| Steven Consiglio | State University of New York at Albany |
| Wanxue Zeng | State University of New York at Albany |
| Nathaniel Berliner | State University of New York at Albany |
| Eric T. Eisenbraun | State University of New York at Albany |
Films
Plasma HfNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Thermal Stability
Analysis: Custom
Substrates
| SiO2 |
Notes
| 1345 |