Publication Information

Title: Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Type: Journal

Info: Nanoscale Research Letters (2017) 12:324

Date: 2017-04-20

DOI: http://dx.doi.org/10.1186/s11671-017-2098-5

Author Information

Name

Institution

Xiamen University of Technology

Da-Yeh University

Da-Yeh University

Xiamen University

Xiamen University

National Chung-Hsing University

National Chung-Hsing University

Xiamen University of Technology

Xiamen University of Technology

Xiamen University of Technology

Films

Plasma HfO2 using Picosun R200

Deposition Temperature = 250C

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Minority Carrier Lifetime

Photoconductance

Sinton WCT-120 Lifetime Tester

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Fixed Charge

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Interface State Density

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Thickness

SEM, Scanning Electron Microscopy

JEOL 2100F

Microstructure

SEM, Scanning Electron Microscopy

JEOL 2100F

Interlayer

SEM, Scanning Electron Microscopy

JEOL 2100F

Substrates

Si(100)

Keywords

Nucleation

Passivation

Notes

1032



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