Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:324
Date:
2017-04-20
Author Information
| Name | Institution |
|---|---|
| Xiao-Ying Zhang | Xiamen University of Technology |
| Chia-Hsun Hsu | Da-Yeh University |
| Shui-Yang Lien | Da-Yeh University |
| Songyan Chen | Xiamen University |
| Wei Huang | Xiamen University |
| Chih-Hsiang Yang | National Chung-Hsing University |
| Chung-Yuan Kung | National Chung-Hsing University |
| Wen-Zhang Zhu | Xiamen University of Technology |
| Fei-Bing Xiong | Xiamen University of Technology |
| Xian-Guo Meng | Xiamen University of Technology |
Films
Plasma HfO2
Film/Plasma Properties
Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Interlayer
Analysis: SEM, Scanning Electron Microscopy
Substrates
| Si(100) |
Notes
| 1032 |