Publication Information

Title:
Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:324
Date:
2017-04-20

Author Information

Name Institution
Xiao-Ying ZhangXiamen University of Technology
Chia-Hsun HsuDa-Yeh University
Shui-Yang LienDa-Yeh University
Songyan ChenXiamen University
Wei HuangXiamen University
Chih-Hsiang YangNational Chung-Hsing University
Chung-Yuan KungNational Chung-Hsing University
Wen-Zhang ZhuXiamen University of Technology
Fei-Bing XiongXiamen University of Technology
Xian-Guo MengXiamen University of Technology

Films


Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Interlayer
Analysis: SEM, Scanning Electron Microscopy

Substrates

Si(100)

Keywords

Nucleation
Passivation

Notes

1032