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Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
Type:
Journal
Info:
Appl. Sci. 2017, 7, 1244
Date:
2017-11-27
Author Information
| Name | Institution |
|---|---|
| Xiao-Ying Zhang | Xiamen University of Technology |
| Chia-Hsun Hsu | Da-Yeh University |
| Yun-Shao Cho | Da-Yeh University |
| Shui-Yang Lien | Da-Yeh University |
| Wen-Zhang Zhu | Xiamen University of Technology |
| Songyan Chen | Xiamen University |
| Wei Huang | Xiamen University |
| Lin-Gui Xie | Xiamen University of Technology |
| Lian-Dong Chen | Xiamen University of Technology |
| Xu-Yang Zou | Xiamen University of Technology |
| Si-Xin Huang | Xiamen University of Technology |
Films
Plasma HfO2
Film/Plasma Properties
Characteristic: Minority Carrier Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Characteristic: Surface Recombination Velocity
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: I-V, Current-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Open Circuit Voltage
Analysis: -
Characteristic: Short Circuit Current
Analysis: -
Characteristic: Fill Factor
Analysis: -
Characteristic: Efficiency
Analysis: -
Substrates
| Silicon |
Notes
| 1139 |