Publication Information

Title: Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Type: Journal

Info: Appl. Sci. 2017, 7, 1244

Date: 2017-11-27

DOI: http://dx.doi.org/10.3390/app7121244

Author Information

Name

Institution

Xiamen University of Technology

Da-Yeh University

Da-Yeh University

Da-Yeh University

Xiamen University of Technology

Xiamen University

Xiamen University

Xiamen University of Technology

Xiamen University of Technology

Xiamen University of Technology

Xiamen University of Technology

Films

Plasma HfO2 using Picosun R200

Deposition Temperature = 250C

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Minority Carrier Lifetime

QSSPC, Quasi-Steady-State PhotoConductance Decay

Sinton WCT-120 Lifetime Tester

Surface Recombination Velocity

QSSPC, Quasi-Steady-State PhotoConductance Decay

Sinton WCT-120 Lifetime Tester

Fixed Charge Density

C-V, Capacitance-Voltage Measurements

-

Interface Trap Density

I-V, Current-Voltage Measurements

-

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

-

Images

TEM, Transmission Electron Microscope

-

Open Circuit Voltage

Unknown

-

Short Circuit Current

Unknown

-

Fill Factor

Unknown

-

Efficiency

Unknown

-

Substrates

Silicon

Keywords

Solar

Notes

1139



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