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Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Type:
Journal
Info:
Appl. Sci. 2017, 7, 1244
Date:
2017-11-27
DOI:
http://dx.doi.org/10.3390/app7121244

Author Information

Name Institution
Xiao-Ying ZhangXiamen University of Technology
Chia-Hsun HsuDa-Yeh University
Yun-Shao ChoDa-Yeh University
Shui-Yang LienDa-Yeh University
Wen-Zhang ZhuXiamen University of Technology
Songyan ChenXiamen University
Wei HuangXiamen University
Lin-Gui XieXiamen University of Technology
Lian-Dong ChenXiamen University of Technology
Xu-Yang ZouXiamen University of Technology
Si-Xin HuangXiamen University of Technology

Films

Plasma HfO2

Hardware used: Picosun R200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Surface Recombination Velocity
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Open Circuit Voltage
Analysis: -
Diagnostic: -

Characteristic: Short Circuit Current
Analysis: -
Diagnostic: -

Characteristic: Fill Factor
Analysis: -
Diagnostic: -

Characteristic: Efficiency
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

1139