Publication Information

Title:
Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 6 (5) C70-C72 (2003)
Date:
2003-03-07

Author Information

Name Institution
Yong Ju LeeKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films



Plasma Al


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Resistivity, Sheet Resistance
Analysis: -

Characteristic: Oxidation Resistance
Analysis: -

Substrates

SiO2
TiN

Keywords

FRAM, Ferroelectric Random Access Memory
Diffusion Barrier
Oxidation Resistance

Notes

TDMAT - purge - NH3 - purge - H2 plasma - purge - TMA - purge - H2 plasma - purge
51