Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 6 (5) C70-C72 (2003)
Date:
2003-03-07
Author Information
| Name | Institution |
|---|---|
| Yong Ju Lee | Korea Advanced Institute of Science and Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Characteristic: Oxidation Resistance
Analysis: -
Substrates
| SiO2 |
| TiN |
Notes
| TDMAT - purge - NH3 - purge - H2 plasma - purge - TMA - purge - H2 plasma - purge |
| 51 |