Publication Information

Title: Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN

Type: Journal

Info: Electrochemical and Solid-State Letters, 6 (5) C70-C72 (2003)

Date: 2003-03-07

DOI: http://dx.doi.org/10.1149/1.1561282

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Plasma TiAlN using Custom

Deposition Temperature Range N/A

3275-24-9

7664-41-7

1333-74-0

75-24-1

Plasma TiN using Custom

Deposition Temperature Range N/A

3275-24-9

7664-41-7

1333-74-0

Plasma Al using Custom

Deposition Temperature Range N/A

75-24-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Profilometry

Tencor Alpha-Step Profilometer

Thickness

TEM, Transmission Electron Microscope

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Resistivity, Sheet Resistance

Unknown

-

Oxidation Resistance

Unknown

-

Substrates

SiO2

TiN

Keywords

FRAM, Ferroelectric Random Access Memory

Diffusion Barrier

Oxidation Resistance

Notes

TDMAT - purge - NH3 - purge - H2 plasma - purge - TMA - purge - H2 plasma - purge

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