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Publication Information

Title: Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN

Type: Journal

Info: Electrochemical and Solid-State Letters, 6 (5) C70-C72 (2003)

Date: 2003-03-07

DOI: http://dx.doi.org/10.1149/1.1561282

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Plasma TiAlN using Custom

Deposition Temperature Range N/A

3275-24-9

7664-41-7

1333-74-0

75-24-1

Plasma TiN using Custom

Deposition Temperature Range N/A

3275-24-9

7664-41-7

1333-74-0

Plasma Al using Custom

Deposition Temperature Range N/A

75-24-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Profilometry

Tencor Alpha-Step Profilometer

Thickness

TEM, Transmission Electron Microscope

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Resistivity, Sheet Resistance

Unknown

Unknown

Oxidation Resistance

Unknown

Unknown

Substrates

SiO2

TiN

Keywords

FRAM, Ferroelectric Random Access Memory

Diffusion Barrier

Oxidation Resistance

Notes

TDMAT - purge - NH3 - purge - H2 plasma - purge - TMA - purge - H2 plasma - purge

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