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TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 11 2 H19-H21 2008
Date:
2007-11-26
Author Information
| Name | Institution |
|---|---|
| Woojin Jeon | Korea Advanced Institute of Science and Technology |
| Hoi-Sung Chung | Korea Advanced Institute of Science and Technology |
| Daekwon Joo | Korea Advanced Institute of Science and Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Dielectric Constant, Permittivity
Analysis: CV, Cyclic Voltammetry
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: CV, Cyclic Voltammetry
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: -
Substrates
| Ir |
| Silicon |
Notes
| RTA on some TiO2-Al2O3 films. |
| 32 |