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Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 12(2) G5-G8 (2009)
Date:
2008-11-14
DOI:
http://dx.doi.org/10.1149/1.3028218

Author Information

Name Institution
Ji-Hoon AhnKorea Advanced Institute of Science and Technology
Ja-Yong KimHynix Semiconductor
Jin-Hyock KimHynix Semiconductor
Jae-Sung RohHynix Semiconductor
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma SrTiO3

Hardware used: Unknown
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
Where to buy precursor
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal RuO2

Hardware used: Unknown
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SrO

Hardware used: Unknown
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thermal Stability
Analysis: Anneal
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: SPA 400

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Ru
SiO2

Notes

800C O2 anneal of RuO2 etched the film.
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