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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Study on the characteristics of aluminum thin films prepared by atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 20(6), Nov/Dec 2002
Date:
2002-11-01
Author Information
| Name | Institution |
|---|---|
| Yong Ju Lee | Korea Advanced Institute of Science and Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Substrates
| TiN |
Keywords
| Interconnect |
Notes
| Description of why TMA forms dimer. |
| TMA vapor pressure = 1117 Pa at room T. |
| Pyrolytic decomposition temperature >350C with references. |
| 43 |