Study on the characteristics of aluminum thin films prepared by atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 20(6), Nov/Dec 2002
Date:
2002-11-01
DOI:
http://dx.doi.org/10.1116/1.1513636

Author Information

Name Institution
Yong Ju LeeKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Al

Hardware used: Custom
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
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H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Tencor Alpha-Step Profilometer

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

TiN

Keywords

Interconnect

Notes

Description of why TMA forms dimer.
TMA vapor pressure = 1117 Pa at room T.
Pyrolytic decomposition temperature >350C with references.
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