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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
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Study on the characteristics of aluminum thin films prepared by atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 20(6), Nov/Dec 2002
Date:
2002-11-01
Author Information
| Name | Institution |
|---|---|
| Yong Ju Lee | Korea Advanced Institute of Science and Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Substrates
| TiN |
Keywords
| Interconnect |
Notes
| Description of why TMA forms dimer. |
| TMA vapor pressure = 1117 Pa at room T. |
| Pyrolytic decomposition temperature >350C with references. |
| 43 |