Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 32, 031506 (2014)
Date:
2014-02-28
DOI:
http://dx.doi.org/10.1116/1.4868215

Author Information

Name Institution
Michael BurkeTyndall National Institute, University College Cork
Alan BlakeTyndall National Institute, University College Cork
Ian M. PoveyTyndall National Institute, University College Cork
Michael SchmidtTyndall National Institute, University College Cork
Nikolay PetkovTyndall National Institute, University College Cork
Patrick CarolanTyndall National Institute, University College Cork
Aidan J. QuinnTyndall National Institute, University College Cork

Films

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4156A

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100

Substrates

SiO2

Notes

n-type Si(100) substrates HF-dipped, O3 cleaned, and DI rinsed. 1 micron thermal SiO2 grown.
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