Publication Information

Title: Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique

Type: Journal

Info: Solid State Communications 258 (2017) 49 - 53

Date: 2017-04-20

DOI: https://doi.org/10.1016/j.ssc.2017.04.015

Author Information

Name

Institution

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

Films

Plasma HfNx using Unknown

Deposition Temperature Range N/A

19962-11-9

7727-37-9

1333-74-0

Plasma TiN using Unknown

Deposition Temperature Range N/A

3275-24-9

7727-37-9

1333-74-0

Plasma HfTiN using Unknown

Deposition Temperature Range N/A

19962-11-9

3275-24-9

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Dimension ICON

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Work Function

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Keywords

Notes

1007



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