Publication Information

Title: Atomic layer deposition of titanium nitride for quantum circuits

Type: Journal

Info: Appl. Phys. Lett. 113, 212601 (2018)

Date: 2018-10-01

DOI: http://dx.doi.org/10.1063/1.5053461

Author Information

Name

Institution

University of Chicago

University of Chicago

University of Chicago

University of Chicago

University of Chicago

Argonne National Laboratory

University of Chicago

University of Chicago

University of Chicago

Films

Deposition Temperature = 270C

3275-24-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Critical Temperature

Four-point Probe

Quantum Design PPMS

Resistivity, Sheet Resistance

Four-point Probe

Quantum Design PPMS

Sheet Inductance

Four-point Probe

Quantum Design PPMS

Compositional Depth Profiling

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Bruker D2 Phaser XE-T

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Kratos Axis

Substrates

Si(111)

Keywords

Superconductor

Notes

830



Shortcuts



© 2014-2019 plasma-ald.com