Publication Information

Title:
Atomic layer deposition of titanium nitride for quantum circuits
Type:
Journal
Info:
Appl. Phys. Lett. 113, 212601 (2018)
Date:
2018-10-01

Author Information

Name Institution
Abigail ShearrowUniversity of Chicago
Gerwin KoolstraUniversity of Chicago
Samuel J. WhiteleyUniversity of Chicago
Nathan EarnestUniversity of Chicago
Peter S. BarryUniversity of Chicago
F. Joseph HeremansArgonne National Laboratory
David D. AwschalomUniversity of Chicago
Erik ShirokoffUniversity of Chicago
David I. SchusterUniversity of Chicago

Films


Film/Plasma Properties

Characteristic: Critical Temperature
Analysis: Four-point Probe

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Sheet Inductance
Analysis: Four-point Probe

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(111)

Keywords

Superconductor

Notes

830