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Atomic layer deposition of titanium nitride for quantum circuits
Type:
Journal
Info:
Appl. Phys. Lett. 113, 212601 (2018)
Date:
2018-10-01
Author Information
| Name | Institution |
|---|---|
| Abigail Shearrow | University of Chicago |
| Gerwin Koolstra | University of Chicago |
| Samuel J. Whiteley | University of Chicago |
| Nathan Earnest | University of Chicago |
| Peter S. Barry | University of Chicago |
| F. Joseph Heremans | Argonne National Laboratory |
| David D. Awschalom | University of Chicago |
| Erik Shirokoff | University of Chicago |
| David I. Schuster | University of Chicago |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Critical Temperature
Analysis: Four-point Probe
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Sheet Inductance
Analysis: Four-point Probe
Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si(111) |
Notes
| 830 |