Publication Information

Title: Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor

Type: Journal

Info: J. Vac. Sci. Technol. A 22(1), Jan/Feb 2004

Date: 2004-01-01

DOI: http://dx.doi.org/10.1116/1.1624285

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Pusan National University

Films

Plasma TiN using Custom

Deposition Temperature Range = 175-350C

3275-24-9

1333-74-0

Plasma TiN using Custom

Deposition Temperature Range = 175-350C

3275-24-9

7727-37-9

1333-74-0

Plasma TiN using Custom

Deposition Temperature Range = 175-350C

3275-24-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Diffusion Barrier Properties

XRD, X-Ray Diffraction

-

Resistivity, Sheet Resistance

Four-point Probe

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Conformality, Step Coverage

TEM, Transmission Electron Microscope

-

Thickness

AES, Auger Electron Spectroscopy

-

Thickness

TEM, Transmission Electron Microscope

-

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

SiO2 cleaned with pirahna solution for organics removal

N2 plasma films better than H2 or N2/H2 plasma films

44



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