Publication Information

Title:
Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
Type:
Journal
Info:
J. Vac. Sci. Technol. A 22(1), Jan/Feb 2004
Date:
2004-01-01

Author Information

Name Institution
Ju Youn KimHanyang University
Sangwon SeoHanyang University
Do Youl KimHanyang University
Hyeongtag JeonHanyang University
Yangdo KimPusan National University

Films



Plasma TiN


Film/Plasma Properties

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

SiO2 cleaned with pirahna solution for organics removal
N2 plasma films better than H2 or N2/H2 plasma films
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