Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
Type:
Journal
Info:
J. Vac. Sci. Technol. A 22(1), Jan/Feb 2004
Date:
2004-01-01
Author Information
| Name | Institution |
|---|---|
| Ju Youn Kim | Hanyang University |
| Sangwon Seo | Hanyang University |
| Do Youl Kim | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Yangdo Kim | Pusan National University |
Films
Film/Plasma Properties
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiO2 |
Notes
| SiO2 cleaned with pirahna solution for organics removal |
| N2 plasma films better than H2 or N2/H2 plasma films |
| 44 |