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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
Type:
Conference Proceedings
Info:
ECS Transactions, 50 (13) 151-157 (2013)
Date:
2012-06-01
Author Information
| Name | Institution |
|---|---|
| Loïc Assaud | Aix-Marseille Université |
| Margrit Hanbücken | Aix-Marseille Université |
| Lionel Santinacci | Aix-Marseille Université |
Films
Thermal Al2O3
Thermal TiN
Plasma TiN
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Substrates
| Si(100) |
Keywords
| Plasma vs Thermal Comparison |
Notes
| 1367 |