Publication Information

Title:
Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
Type:
Conference Proceedings
Info:
ECS Transactions, 50 (13) 151-157 (2013)
Date:
2012-06-01
DOI:
http://dx.doi.org/10.1149/05013.0151ecst

Author Information

Name Institution
Loïc AssaudAix-Marseille Université
Margrit HanbückenAix-Marseille Université
Lionel SantinacciAix-Marseille Université

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, AlMe3, Trimethyl Aluminum
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Thermal TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide
CAS#: 3275-24-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide
CAS#: 3275-24-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6320F

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6320F

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VSW HA150

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: ION TOF TofSIMS 5

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Keithley 236

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

1367