Publication Information

Title:
Atomic layer deposition of titanium nitride from TDMAT precursor
Type:
Journal
Info:
Microelectronic Engineering 86 (2009) 72-77
Date:
2008-10-02

Author Information

Name Institution
Jan MusschootGhent University
Qi XieFudan University
Davy DeduytscheGhent University
Sven Van den BergheSCK-CEN
Ronald L. Van MeirhaegheGhent University
Christophe DetavernierGhent University

Films




Film/Plasma Properties

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

SiO2
Si(100)

Keywords

Diffusion Barrier
Gate Metal

Notes

Substrates RCA cleaned.
Si(100) substrates HF dipped for diffusion barrier measurements.
Resistivity decreases with increasing plasma power, increasing plasma time, and increasing film thickness.
Reference 11 might be a good read to compare different thin film thickness measurement techniques.
92