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Publication Information

Title: Atomic layer deposition of titanium nitride from TDMAT precursor

Type: Journal

Info: Microelectronic Engineering 86 (2009) 72-77

Date: 2008-10-02

DOI: http://dx.doi.org/10.1016/j.mee.2008.09.036

Author Information

Name

Institution

Ghent University

Fudan University

Ghent University

SCK-CEN

Ghent University

Ghent University

Films

Thermal TiN using Custom

Deposition Temperature Range N/A

3275-24-9

7664-41-7

Plasma TiN using Custom

Deposition Temperature Range N/A

3275-24-9

7664-41-7

Plasma TiN using Custom

Deposition Temperature Range N/A

3275-24-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Diffusion Barrier Properties

XRD, X-Ray Diffraction

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Thickness

XRR, X-Ray Reflectivity

Bruker-Axs D8 Advance diffractometer/reflectometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

Substrates

SiO2

Si(100)

Keywords

Diffusion Barrier

Gate Metal

Notes

Substrates RCA cleaned.

Si(100) substrates HF dipped for diffusion barrier measurements.

Resistivity decreases with increasing plasma power, increasing plasma time, and increasing film thickness.

Reference 11 might be a good read to compare different thin film thickness measurement techniques.

92

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