Publication Information

Title: Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality

Type: Conference Proceedings

Info: ECS Transactions, 16 (4) 239-246 (2008)

Date: 2008-10-15

DOI: http://dx.doi.org/10.1149/1.2979999

Author Information

Name

Institution

Ghent University

Ghent University

Ghent University

Ghent University

Films

Thermal Al2O3 using Custom ICP

Deposition Temperature Range = 65-200C

75-24-1

7732-18-5

Plasma Al2O3 using Custom ICP

Deposition Temperature Range = 65-200C

75-24-1

7732-18-5

Plasma Al2O3 using Custom ICP

Deposition Temperature Range = 65-200C

75-24-1

7782-44-7

Thermal TiN using Custom ICP

Deposition Temperature = 200C

3275-24-9

7664-41-7

Plasma TiN using Custom ICP

Deposition Temperature = 200C

3275-24-9

7664-41-7

Thermal AlN using Custom ICP

Deposition Temperature = 250C

75-24-1

7664-41-7

Plasma AlN using Custom ICP

Deposition Temperature = 250C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Thickness

XRR, X-Ray Reflectivity

-

Density

XRR, X-Ray Reflectivity

-

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

-

Resistivity, Sheet Resistance

Unknown

-

Conformality, Step Coverage

Custom

Custom

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

1180



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