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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
Understanding and optimizing the floating body retention in FDSOI UTBOX
Type:
Journal
Info:
Nanoscale 2016, Volume 117, Issue , pp 123 - 129
Date:
2015-12-12
Author Information
| Name | Institution |
|---|---|
| Marc Aoulaiche | Micron Technology Belgium |
| Eddy Simoen | IMEC |
| C. Caillat | Micron Technology Belgium |
| L. Witters | IMEC |
| K.K. Bourdelle | SOITEC |
| Minh D. Nguyen | SOITEC-USA |
| Joao Antonio Martino | University of Sao Paulo |
| Cor Claeys | IMEC |
| P. Fazan | Micron Technology Belgium |
| M. Jurczak | IMEC |
Films
Film/Plasma Properties
Substrates
| SiO2 |
Keywords
Notes
| 552 |