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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
Type:
Journal
Info:
J. Mater. Chem. C, 2016, 4, 11067-11073
Date:
2016-10-11
Author Information
| Name | Institution |
|---|---|
| Li Zheng | Chinese Academy of Sciences |
| Xinhong Cheng | Chinese Academy of Sciences |
| Peiyi Ye | University of California - Los Angeles (UCLA) |
| Lingyan Shen | Chinese Academy of Sciences |
| Qian Wang | Chinese Academy of Sciences |
| Dongliang Zhang | Chinese Academy of Sciences |
| Zongliang Wang | Chinese Academy of Sciences |
| Yuehui Yu | Chinese Academy of Sciences |
| Xinke Yu | University of California - Los Angeles (UCLA) |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 967 |