Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices

Type:
Journal
Info:
J. Mater. Chem. C, 2016, 4, 11067-11073
Date:
2016-10-11
DOI:
http://dx.doi.org/10.1039/C6TC03514K

Author Information

Name Institution
Li ZhengChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Peiyi YeUniversity of California - Los Angeles (UCLA)
Lingyan ShenChinese Academy of Sciences
Qian WangChinese Academy of Sciences
Dongliang ZhangChinese Academy of Sciences
Zongliang WangChinese Academy of Sciences
Yuehui YuChinese Academy of Sciences
Xinke YuUniversity of California - Los Angeles (UCLA)

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma TiN

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma TiAlN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

967