High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-07-15

Author Information

Name Institution
Michael BurkeTyndall National Institute, University College Cork
Alan BlakeTyndall National Institute, University College Cork
Vladamir DjaraTyndall National Institute, University College Cork
Dan O'ConnellTyndall National Institute, University College Cork
Ian M. PoveyTyndall National Institute, University College Cork
Karim CherkaouiTyndall National Institute, University College Cork
Scott MonaghanTyndall National Institute, University College Cork
Jim ScullyTyndall National Institute, University College Cork
Richard MurphyTyndall National Institute, University College Cork
Paul K. HurleyTyndall National Institute, University College Cork
Martin E. PembleTyndall National Institute, University College Cork
Aidan J. QuinnTyndall National Institute, University College Cork

Films



Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: ESR, Equivalent Series Resistance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Quality Factor
Analysis: Q-V, Quality-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Substrates

Si(100)

Notes

30:1 trenches. TiN thinner at bottom.
TiN etched with Cl2 which is highly selective to Al2O3.
Via to bottom electrode etched with non-selective BCl3 process.
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