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Publication Information

Title: High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition

Type: Journal

Info: J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015

Date: 2014-07-15

DOI: http://dx.doi.org/10.1116/1.4891319

Author Information

Name

Institution

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Tyndall National Institute, University College Cork

Films

Deposition Temperature = 250C

75-24-1

7732-18-5

Deposition Temperature = 250C

3275-24-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent E4980A Precision LCR Meter

ESR, Equivalent Series Resistance

C-V, Capacitance-Voltage Measurements

Agilent E4980A Precision LCR Meter

Quality Factor

Q-V, Quality-Voltage Measurements

Agilent E4980A Precision LCR Meter

Leakage Current

I-V, Current-Voltage Measurements

HP 4156B Semiconductor Parameter Analyzer

Thickness

SEM, Scanning Electron Microscopy

JEOL 7500F

Substrates

Si(100)

Keywords

Capacitors

Notes

30:1 trenches. TiN thinner at bottom.

TiN etched with Cl2 which is highly selective to Al2O3.

Via to bottom electrode etched with non-selective BCl3 process.

107



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