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Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
  • Surface modification

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Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects

Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2016 volume 5, issue 5, P256-P263
Date:
2016-02-01
DOI:
http://dx.doi.org/10.1149/2.0141605jss

Author Information

Name Institution
K. V. SagiClarkson University
H. P. AmanapuClarkson University
S. R. AletyClarkson University
S. V. BabuClarkson University

Films

Plasma Ru

Hardware used: Unknown
Ethylcyclopentadienyl pyrrolyl ruthenium
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 330C

Plasma TiN

Hardware used: Unknown
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 330C

Film/Plasma Properties

Substrates

Silicon
SiO2

Notes

774